Modelling of MESFET by two region modelPANDEY, A. K; SHUKLA, S. R; VYAS, H. P et al.SPIE proceedings series. 1998, pp 929-932, isbn 0-8194-2756-X, 2VolConference Paper

Experimental investigations on steady state natural circulation behavior of multiple parallel boiling channel systemVYAS, H. P; VENKAT RAJ, V; NAYAK, A. K et al.Nuclear engineering and design. 2010, Vol 240, Num 11, pp 3862-3867, issn 0029-5493, 6 p.Article

Ohmic contacts to pseudomorphic HEMTs with low contact resistance due to enhanced Ge penetration through AlGaAs layersSAI SARAVANAN, G; MAHADEVA BHAT, K; MURALEEDHARAN, K et al.Semiconductor science and technology. 2008, Vol 23, Num 2, issn 0268-1242, 025019.1-025019.6Article

Effect of various alloying cycles on AuGe/Ni/Au ohmic contact to p-HEMTSHARMA, H. S; MAHAJAN, Somna S; GURU, Vandana et al.SPIE proceedings series. 2002, pp 918-921, isbn 0-8194-4500-2, 2VolConference Paper

Modified citric acid : Hydrogen peroxide etchant for gate recess of GaAs/GaAlAs MODFETsMEHTA, S. K; AGARWAL, V. R; RAWAL, D. S et al.SPIE proceedings series. 1998, pp 24-921, isbn 0-8194-2756-X, 2VolConference Paper

An improved model for GaAs MESFETs suitable for a wide bias rangeHARNAL, Hitesh; BASU, Ananjan; KOUL, Shiban K et al.IEEE microwave and wireless components letters. 2007, Vol 17, Num 1, pp 52-54, issn 1531-1309, 3 p.Article

Engineering interface composition for passivation of HgCdTe photodiodesPAL, R; MALIK, Amit; SRIVASTAV, Vanya et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 11, pp 2727-2734, issn 0018-9383, 8 p.Article

Air - bridge interconnection technology for GaAs MMICsNAIK, A. A; SHARMA, H. S; PRABHAKAR, S et al.SPIE proceedings series. 2002, pp 894-897, isbn 0-8194-4500-2, 2VolConference Paper

Effect of gate profile on the characteristics of 0.5μm GaAs MESFETsNAIK, A. A; RAWAL, D. S; GOVINDACHARYULU, P. A et al.SPIE proceedings series. 2002, pp 1148-1151, isbn 0-8194-4500-2, 2VolConference Paper

A trench-isolated submicrometer CMOS technologyVYAS, H. P; LUTZE, R. S. L; HUANG, J. S. T et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 5, pp 926-931, issn 0018-9383Article

Microstructure and electrical characteristics of Ni-Cr thin filmsVINAYAK, Seema; VYAS, H. P; VANKAR, V. D et al.Thin solid films. 2007, Vol 515, Num 18, pp 7109-7116, issn 0040-6090, 8 p.Article

Ni-Cr thin film resistor fabrication for GaAs monolithic microwave integrated circuitsVINAYAK, Seema; VYAS, H. P; MURALEEDHARAN, K et al.Thin solid films. 2006, Vol 514, Num 1-2, pp 52-57, issn 0040-6090, 6 p.Article

Study of silicon nitride films deposited by plasma enhanced chemical vapour deposition (PECVD) using 2%SiH₄/N₂: with and without heDAYAL, S; RAMAN, R; GULATI, R et al.SPIE proceedings series. 2002, pp 1075-1078, isbn 0-8194-4500-2, 2VolConference Paper

TEM characterisation of nichrome thin filmsSRIDHARA RAO, D. V; MURALEEDHARAN, K; VINAYAK, Seema et al.SPIE proceedings series. 2002, pp 1190-1194, isbn 0-8194-4500-2, 2VolConference Paper

On the ubiquity of ion bombardment modification of silicon Schottky barriersASHOK, S; GIEWONT, K; VYAS, H. P et al.Physica status solidi. A. Applied research. 1986, Vol 98, Num 1, pp K99-K104, issn 0031-8965Article

On the ubiquity of ion bombardment modification of silicon Schottky barriersASHOK, S; GIEWONT, K; VYAS, H. P et al.Physica status solidi. A. Applied research. 1986, Vol 98, Num 1, pp K99-K104, issn 0031-8965Article

Electrical properties of titanium-HgCdTe contactsSRWASTAV, V; PAL, R; SHARMA, B. L et al.Journal of electronic materials. 2005, Vol 34, Num 3, pp 225-231, issn 0361-5235, 7 p.Article

RBS study of annealing effects in passivated mercury cadmium tellurideANJALI; SRIVASTAVA, P; MOHAPATRA, S et al.Semiconductor science and technology. 2005, Vol 20, Num 10, pp 1072-1077, issn 0268-1242, 6 p.Article

Electron resist characterization techniqueSAXENA, Renuka; SHARMA, M. U; PRASAD, Manju et al.SPIE proceedings series. 2002, pp 915-917, isbn 0-8194-4500-2, 2VolConference Paper

Development and TCR control of Nichrome thin film resistors for GaAs MMICsVINAYAK, Seema; SRIVASTAV, R. D; VYAS, H. P et al.SPIE proceedings series. 2002, pp 936-939, isbn 0-8194-4500-2, 2VolConference Paper

Selective area n⁺ implanted MESFET process for the fabrication of MMICsSEHGAL, B. K; NAIK, A. A; GULATI, R et al.SPIE proceedings series. 2002, pp 842-845, isbn 0-8194-4500-2, 2VolConference Paper

Study of collector current characteristics of AlGaAs/GaAs HBT using drift-diffusion and thermionic-field-diffusion modelsSHUKLA, S. R; NARANG, Vivan; SINGH, D. B et al.SPIE proceedings series. 2002, pp 834-836, isbn 0-8194-4500-2, 2VolConference Paper

Validation of scaled device models through design of a 2-3 GHz MMIC amplifierARORA, Vijesh; SHUKLA, S. R; VYAS, H. P et al.SPIE proceedings series. 2002, pp 850-852, isbn 0-8194-4500-2, 2VolConference Paper

Extraction of MESFET small signal equivalent circuit parametersPANDEY, A. K; THAKUR, J. P; SHUKLA, S. R et al.SPIE proceedings series. 2000, pp 625-628, isbn 0-8194-3601-1Conference Paper

Design and development of cold neutron guides at the Dhruva reactorMADHAV RAO, L; RAO, K. R; SHUKLA, S. G et al.Indian journal of pure & applied physics. 1989, Vol 27, Num 9-10, pp 601-609, issn 0019-5596, NS2Article